BAS16DW Fast switching speed general purpose switching Small Signal Diodes –Topdiode
Silicon Epitaxial Planar Switching Diode
● BAS16DW Fast switching speed general purpose switching Small Signal Diodes Introduction
BAS16DW Small Signal Switching 100V 0.2A 4ns 6-Pin SOT-363 T/R
● BAS16DW Fast switching speed general purpose switching Small Signal Diodes Features
* Fast switching speed
* Ultra-small surface mount package
* For general purpose switching applications
* High conductance
● BAS16DW Fast switching speed general purpose switching Small Signal Diodes Applications
* High-speed switching
● BAS16DW Fast switching speed general purpose switching Small Signal Diodes Qualification，Delivery, Shipping and Terms
* RoHS Compliant
* REACH Compliant
* Regular Stock Diode BAS16DW Available
* Ex-work, FCA Terms, or FOB Terms
● BAS16DW Fast switching speed general purpose switching Small Signal Diodes Outlines and External Dimensions
● BAS16DW Fast switching speed general purpose switching Small Signal Diodes MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Ta = 25℃)
|
Parameter
|
Symbol
|
Value
|
Unit
|
|
Peak Reverse Voltage
|
VRM
|
100
|
V
|
|
Reverse Voltage
|
VR
|
75
|
V
|
|
Average Rectified Forward Current
|
IF(AV)
|
200
|
mA
|
|
Forward Continuous Current
|
IFM
|
300
|
mA
|
|
Non-Repetitive Peak Forward Current t = 1 µs
t = 1 s
|
IFSM
|
2
1
|
A
|
|
Power Dissipation
|
Ptot
|
200
|
mW
|
|
Thermal Resistance, Junction to Ambient
|
RqJA
|
625
|
℃/W
|
|
Operating and Storage Temperature Range
|
Tj,Tstg
|
- 65 to + 150
|
℃
|
Characteristics at Ta = 25℃
|
Parameter
|
Symbol
|
Min.
|
Max.
|
Unit
|
|
Reverse Breakdown Voltage
at IR= 100 μA
|
V(BR)R
|
75
|
-
|
V
|
|
Forward Voltage
at IF= 1 mA
at IF= 10 mA
at IF= 50 mA
at IF= 150 mA
|
VF
|
-
-
-
-
|
0.715
0.855
1
1.25
|
V
|
|
Peak Reverse Current
at VR= 20 V
at VR= 75 V
at VR= 25 V, Tj= 150℃
at VR= 75 V, Tj= 150℃
|
IR
|
-
-
-
-
|
25
1
30
50
|
nA
μA
μA
μA
|
|
Total Capacitance
at VR= 0 V,f = 1 MHz
|
CT
|
-
|
2
|
pF
|
|
Reverse Recovery Time
at IF= IR= 10 mA, Irr= 0.1 X IR, RL= 100 Ω
|
trr
|
-
|
4
|
ns
|
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