BAV99W High speed switching double diode -Topdiode
High-speed switching diode, encapsulated in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package.
● BAV99W High speed switching double diode Introduction
High-speed switching diode, encapsulated in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package.
● BAV99W High speed switching double diode Features
* Fast Switching Speed
* Surface Mount Package Ideally Suited for Automated Insertion
* For General Purpose Switching Applications
● BAV99W High speed switching double diode Applications
* High-speed switching
● BAV99W High speed switching double diode Qualification，Delivery, Shipping and Terms
* RoHS Compliant
* REACH Compliant
* Regular Stock Diode BAV99W Available
* Ex-work, FCA Terms, or FOB Terms
● BAV99W High speed switching double diode Outlines and External Dimensions
● BAV99W High speed switching double diode MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Ta = 25 OC)
|
Parameter
|
Symbol
|
Value
|
Unit
|
|
Repetitive Peak Reverse Voltage
|
VRRM
|
85
|
V
|
|
Reverse Voltage
|
VR
|
75
|
V
|
Continuous Forward Current Single Diode Load
Double Diode Load
|
IF
|
150
130
|
mA
|
|
Repetitive Peak Forward Current
|
IFRM
|
500
|
mA
|
Non-Repetitive Peak Forward Surge Current at t = 1 µs
at t = 1 ms
at t = 1 s
|
IFSM
|
4
1
0.5
|
A
|
|
Total Power Dissipation
|
Ptot
|
200
|
mW
|
|
Thermal Resistance from Junction to Ambient
|
RθJA
|
625
|
OC/W
|
|
Junction Temperature
|
Tj
|
150
|
OC
|
|
Storage Temperature Range
|
Tstg
|
- 55 to + 150
|
OC
|
Characteristics at Ta = 25 OC
|
Parameter
|
Symbol
|
Max.
|
Unit
|
Forward Voltage
at IF= 1 mA
at IF= 10 mA
at IF= 50 mA
at IF= 150 mA
|
VF
|
0.715
0.855
1
1.25
|
V
|
Reverse Current
at VR= 25 V
at VR= 75 V
at VR= 25 V, Tj= 150OC
at VR= 75 V, Tj= 150OC
|
IR
|
30
1
30
50
|
nA
µA
µA
µA
|
Diode Capacitance
at VR= 0, f = 1 MHz
|
Cd
|
1.5
|
pF
|
Reverse Recovery Time
at IF= IR= 10 mA, Irr= 0.1 X IR, RL= 100 Ω
|
trr
|
4
|
ns
|
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