China BC818 NPN Silicon Epitaxial Transistor General Purpose Manufacturers & Suppliers

Product Description
Specifications
Download

● BC818 NPN Silicon Epitaxial Transistor general purpose--Topdiode

BC818 NPN Silicon Epitaxial Transistor general purposefor switching, AF driver and amplifier application. Especially suited for automatic insertion in thick and thin-film circuits.

These transistors are subdivided into three groups16, -25, -40 according to their current gain. As complementary types, the PNP transistors BC808 are recommended

● BC818 NPN Silicon Epitaxial Transistor general purpose Introduction

BC818 NPN general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package

● BC818 NPN Silicon Epitaxial Transistor general purpose Features

* High current

* Three current gain selections

* Ideally Suited for Automatic Insertion

* Epitaxial Planar Die Construction

* Complementary PNP Types Available (BC808)

* For switching and AF Amplifier Applications

* Totally Lead-Free & Fully RoHS Compliant

● BC818 NPN Silicon Epitaxial Transistor general purposeApplications

* General-purpose switching and amplification

* Switching mode power supply (SMPS)

* Adapters

* Lighting application

* On-board DC/DC converter

● BC818 NPN Silicon Epitaxial Transistor general purpose Qualification Delivery, Shipping and Terms

* RoHS Compliant

* REACH Compliant

* Regular Stock Diode Diode Rectifier M7 Available;

* Ex-work, FCA Terms, or FOB Terms

● BC818 NPN Silicon Epitaxial Transistor general purpose Outlines and External Dimensions

● BC818 NPN Silicon Epitaxial Transistor general purposeELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings (Ta= 25 °C)
Parameter	Symbol		Value			Unit
Collector Base Voltage BC817 BC818	Vcbo		50 30			V
Collector Emitter Voltage BC817 BC818	Vceo		45 25			V
Emitter Base Voltage	Vebo		5			V
Collector Current	lc		500			mA
Power Dissipation	Ptot		300			mW
Junction Temperature	Tj		150			°C
Storage Temperature Range	Tstg		-55 to + 150			°C
Electrical Characteristics at Ta= 25 °C
Parameter	Symbol	Min.		Typ.	Max.		Unit
DC Current Gain at VCe = 1 V, lc= 100 mA Current Gain Group -16 -25 -40 at VCe = 1 V, lc= 500 mA	hFE hFE hFE hFE	100 160 250 40		-	250 400 600 -		-
Collector Base Cutoff Current at Vcb=20 V	ICBO	-		-	100		nA
Emitter Base Cutoff Current at Veb=5 V	Iebo	-		-	100		nA
Collector Emitter Saturation Voltage at lc= 500 mA, lB= 50 mA	VcE(sat)	-		-	0.7		V
Base Emitter Voltage at lc=500 mA, VCE= 1 V	VBE(on)	-		-	1.2		V
Transition Frequency at VCe - 5 V, lc= 10 mA, f = 50 MHz	fT	100		-	-		MHz
Collector Base Capacitance at VCB= 10 V,f= 1 MHz	C°b	-		5	-		pF

● BC818 NPN Silicon Epitaxial Transistor general purpose Related Parts

BC818 NPN Silicon Epitaxial Transistor general purpose -Topdiode

RoHS Compliant

REACH Compliant

Hot Tags: BC818 NPN Silicon Epitaxial Transistor General Purpose, Manufacturers, Suppliers, Buy, Factory, In Stock, Bulk, Free Sample, Brands, China, Made in China, Price, Price List, Quotation, REACH, ROHS, Quality, Durable, Advanced