MMBD914 Small Signal Switching Diodes -Topdiode
Silicon Epitaxial Planar Switching Diode
● MMBD914 Small Signal Switching Diodes Introduction
Diode: switching; SMD; 75V; 250mA; 4ns; 2pF SOT363
● BAV756DW Small Signal Switching Diodes Features
* Fast Switching Speed
* Ultra-Small Surface Mount Package
* For General Purpose Switching Applications
* High Conductance
● MMBD914 Small Signal Switching Diodes Applications
* High-speed switching
● MMBD914 Small Signal Switching Diodes Qualification，Delivery, Shipping and Terms
* RoHS Compliant
* REACH Compliant
* Regular Stock Diode BAV756DW Available
* Ex-work, FCA Terms, or FOB Terms
● MMBD914 Small Signal Switching Diodes Outlines and External Dimensions
● MMBD914 Small Signal Switching Diodes MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Ta = 25℃)
|
Parameter
|
Symbol
|
Value
|
Unit
|
|
Repetitive Peak Reverse Voltage
|
VRRM
|
85
|
V
|
|
Reverse Voltage
|
VR
|
75
|
V
|
Continuous Forward Current Single Diode Loaded
All Diodes Loaded
|
IF
|
250
100
|
mA
|
|
Repetitive Peak Forward Current
|
IFRM
|
450
|
mA
|
Non-Repetitive Peak Forward Surge Current at t = 1 µs
at t = 1 ms
at t = 1 s
|
IFSM
|
4
1
0.5
|
A
|
|
Total Power Dissipation
|
Ptot
|
350
|
mW
|
|
Junction Temperature
|
Tj
|
- 65 to + 150
|
℃
|
|
Storage Temperature Range
|
Tstg
|
- 65 to + 150
|
℃
|
Characteristics at Ta = 25℃
|
Parameter
|
Symbol
|
Max.
|
Unit
|
Forward Voltage
at IF= 1 mA
at IF= 10 mA
at IF= 50 mA
at IF= 150 mA
|
VF
|
0.715
0.855
1
1.25
|
V
|
Reverse Current
at VR= 25 V
at VR= 75 V
at VR= 25 V, Tj= 150℃
at VR= 75 V, Tj= 150℃
|
IR
|
30
2.5
60
100
|
nA
µA
µA
µA
|
Diode Capacitance
at VR= 0, f = 1 MHz
|
Cd
|
2
|
pF
|
Reverse Recovery Time
at IF= IR= 10 mA, Irr= 0.1 X IR, RL= 100 Ω
|
trr
|
4
|
ns
|
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