China MMBT2907W NPN Epitaxial Silicon General Purpose Transistor Manufacturers & Suppliers

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● MMBT2907W NPN Epitaxial Silicon General Purpose Transistor --Topdiode

MMBT2907W 60V 600mA SOT-323 Package

MMBT2907W / MMBT2907AW PNP Silicon Epitaxial Planar Medium Power transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package which is designed for low power surface mount application

● MMBT2907W PNP Epitaxial Silicon General Purpose Transistor Introduction

The PNP Bipolar Transistor is housed in the SOT-323/SC-70 package which is designed for low power surface mount applications.

● MMBT2907W PNP Epitaxial Silicon General Purpose Transistor Features

* PNP epitaxial silicon, planar design

* Collector-emitter voltage VCE =-40V

* Collector current IC =-600mA

● MMBT2907W PNP Epitaxial Silicon General Purpose Transistor Application

* For switching and amplifier applications

● MMBT2907W PNP Epitaxial Silicon General Purpose Transistor Qualification，Delivery, Shipping and Terms

* RoHS Compliant

* REACH Compliant

* Regular Stock Diode

* Ex-work, FCA Terms, or FOB Terms

● MMBT2907W PNP Epitaxial Silicon General Purpose Transistor Outlines and External Dimensions

● MMBT2907W PNP Epitaxial Silicon General Purpose Transistor MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings (Ta = 25 °C)

Parameter	Symbol	Value	Unit
Collector Base Voltage	-VCBO	60	V
Collector Emitter Voltage MMBT2907W MMBT2907AW	-VCEO	40 60	V
Emitter Base Voltage	-VEBO	5	V
Collector Current	-IC	600	mA
Total Power Dissipation	Ptot	200	mW
Junction Temperature	Tj	150	°C
Storage Temperature Range	Tstg	- 55 to + 150	°C

MMBT2907W / MMBT2907AW
Characteristics at Ta = 25 °C

Parameter	Symbol	Min.	Max.	Unit
DC Current Gain at -VCE= 10 V, -IC= 0.1 mA MMBT2907W MMBT2907AW at -VCE= 10 V, -IC= 1 mA MMBT2907W MMBT2907AW at -VCE= 10 V, -IC= 10 mA MMBT2907W MMBT2907AW at -VCE= 10 V, -IC= 150 mA at -VCE= 10 V, -IC= 500 mA MMBT2907W MMBT2907AW	hFE	35 75 50 100 75 100 100 30 50	- - - - - - 300 - -	- - - - - - - - -
Collector Base Cutoff Current at -VCB= 50 V	-ICBO	-	100	nA
Collector Emitter Cutoff Current at -VCE= 30 V	-ICES	-	100	nA
Emitter Base Cutoff Current at -VEB= 3 V	-IEBO	-	100	nA
Collector Base Breakdown Voltage at -IC= 10 µA	-V(BR)CBO	60	-	V
Collector Emitter Breakdown Voltage at -IC= 10 mA MMBT2907W MMBT2907AW	-V(BR)CEO	40 60	- -	V
Emitter Base Breakdown Voltage at -IE= 10 µA	-V(BR)EBO	5	-	V
Collector Emitter Saturation Voltage at -IC= 150 mA, -IB= 15 mA at -IC= 500 mA, -IB= 50 mA	-VCE(sat)	- -	0.4 1.6	V
Base Emitter Saturation Voltage at -IC= 150 mA, -IB= 15 mA at -IC= 500 mA, -IB= 50 mA	-VBE(sat)	- -	1.3 2.6	V
Transition Frequency at -VCE= 20 V, IE= 50 mA, f = 100 MHz	fT	200	-	MHz
Collector Output Capacitance at -VCB= 10 V, f = 100 KHz	Cob	-	8	pF
Turn-on Time at -VCC= 30 V, -VBE(OFF)= 1.5 V, -IC= 150 mA, -IB1= 15 mA	ton	-	50	ns
Delay Time at -VCC= 30 V, -VBE(OFF)= 1.5 V, -IC= 150 mA, -IB1= 15 mA	td	-	10	ns
Rise Time at -VCC= 30 V, -VBE(OFF)= 1.5 V, -IC= 150 mA, -IB1= 15 mA	tr	-	40	ns
Turn-off Time at -VCC= 30 V, -IC= 150 mA, IB1= IB2= -15 mA	toff	-	100	ns
Storage Time at -VCC= 30 V, -IC= 150 mA, IB1= IB2= -15 mA	tstg	-	80	ns
Fall Time at -VCC= 30 V, -IC= 150 mA, IB1= IB2= -15 mA	tf	-	30	ns

● MMBT2907W PNP Epitaxial Silicon General Purpose Transistor Related Parts

MMBT2907W PNP Epitaxial Silicon General Purpose Transistor -Topdiode

RoHS Compliant

REACH Compliant

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