MMBT2907W NPN Epitaxial Silicon General Purpose Transistor
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MMBT2907W NPN Epitaxial Silicon General Purpose Transistor

MMBT2907W NPN Epitaxial Silicon General Purpose Transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package which is designed for low power surface mount application

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MMBT2907W NPN Epitaxial Silicon General Purpose Transistor --Topdiode


MMBT2907W 60V 600mA SOT-323 Package

MMBT2907W / MMBT2907AW PNP Silicon Epitaxial Planar Medium Power transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package which is designed for low power surface mount application

 

MMBT2907W PNP Epitaxial Silicon General Purpose Transistor Introduction


The PNP Bipolar Transistor  is housed in the SOT-323/SC-70 package which is designed for low power surface mount applications.

 

MMBT2907W PNP Epitaxial Silicon General Purpose Transistor Features

 

* PNP epitaxial silicon, planar design

* Collector-emitter voltage VCE =-40V

* Collector current IC =-600mA

 

MMBT2907W PNP Epitaxial Silicon General Purpose Transistor Application


* For switching and amplifier applications


MMBT2907W PNP Epitaxial Silicon General Purpose Transistor Qualification,Delivery, Shipping and Terms

 

* RoHS Compliant

* REACH Compliant

* Regular Stock Diode

* Ex-work, FCA Terms, or FOB Terms





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