MMBT3904W NPN Epitaxial Silicon General Purpose Transistor
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MMBT3904W NPN Epitaxial Silicon General Purpose Transistor

MMBT3904W NPN Epitaxial Silicon General Purpose Transistor , Bipolar Transistors - BJT 200mA 60V NPN
The maximum collector emitter voltage VCEO is 40V, the maximum collector current is 200mA, and the maximum collector power consumption is 200mW. The package is SOT-323.

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MMBT3904WNPN Epitaxial Silicon General Purpose Transistor--Topdiode


MMBT3904W NPN Epitaxial Silicon General Purpose Transistor ,Bipolar Transistors - BJT 200mA  60V NPN

The maximum collector emitter voltage VCEO is 40V, the maximum collector current is 200mA, and the maximum collector power consumption is 200mW. The package is SOT-323.

 

 

MMBT3904W NPN Epitaxial Silicon General Purpose TransistorIntroduction


The NPN Bipolar Transistor is designed for general purpose amplifier applications. It is housed in the SOT-323/SC-70, which is designed for low power surface mount applications.

 

MMBT3904W NPN Epitaxial Silicon General Purpose Transistor Features


*  Complementary PNP Type Available (MMBT3906W)

*  Ideal for Medium Power Amplification and Switching

*  Low current capability IC=0.2A

*  Low emitter voltage VCEO=40V

 

MMBT3904W NPN Epitaxial Silicon General Purpose Transistor Application


*  for general purpose amplifier applications



MMBT3904W NPN Epitaxial Silicon General Purpose Transistor Qualification,Delivery, Shipping and Terms

 

* RoHS Compliant

* REACH Compliant

* Regular Stock Diode

* Ex-work, FCA Terms, or FOB Terms



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