MMBT4401W NPN Epitaxial Silicon General Purpose Transistor
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MMBT4401W NPN Epitaxial Silicon General Purpose Transistor

MMBT4401W NPN Epitaxial Silicon General Purpose Transistor , Bipolar Transistors - BJT 600mA 60V NPN SOT-323

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MMBT4401W NPN Epitaxial Silicon General Purpose Transistor--Topdiode


MMBT4401W NPN Epitaxial Silicon General Purpose Transistor, Bipolar Transistors - BJT 600mA 60V NPN SOT-323

MMBT4401W NPN Epitaxial Planar Medium Power Transistor for switching and amplifier applications


MMBT4401W NPN Epitaxial Silicon General Purpose Transistor Introduction


These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which is designed for low power surface mount applications.


MMBT4401WNPN Epitaxial Silicon General Purpose Transistor Features


* NPN epitaxial silicon, planar design

* Collector-emitter voltage

* VCE = 40V

* Collector current IC = 600mA


MMBT4401W NPN Epitaxial Silicon General Purpose Transistor Application


* Amplifier and switch


MMBT4401W NPN Epitaxial Silicon General Purpose Transistor Qualification,Delivery, Shipping and Terms


* RoHS Compliant

* REACH Compliant

* Regular Stock Diode

* Ex-work, FCA Terms, or FOB Terms


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